200910094-3 adva nced power electronics corp. 1/6 ap40n03gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d c i d c i dm d at t c =25c w/c t stg t j symbol value unit parameter rating gate-source voltage + continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a g d s bv 30v low gate charge r 21mw simple drive requirement fast switching characteristics rohs-compliant , halogen-free i 3 6 a g d s to-252 (h) g d s to-251 (j) drain-source voltage 3 0 v 20 v at t =2 5 c 3 6 a at t = 10 0 c 2 5 a 1 5 0 a p total power dissipation 50 w linear derating factor 0. 4 rthj- c maximum thermal resistance, junction-case rthj- a maximum thermal resistance, junction-ambient (pcb mount) 3 62.5 c/w 2.5 c /w o rdering information ap40n03gh-hf-3tr rohs-compliant to-252 shipped on tape and reel ( 3000 pcs/reel) AP40N03GJ-HF-3 tb rohs-compliant to-251 shipped in tubes dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap40n03gh-hf-3 is in the to-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power dc/dc converters. the through-hole to-251 version ( AP40N03GJ-HF-3 ) is available where a small pcb footprint is required. rthj- a maximum thermal resistance, junction-ambient 110 c /w
adva nced power electronics corp. 2/6 ap40n03gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.037 -v/c r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - 18 21 mw v gs =4.5v, i d =14a - 24 30 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 26 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v, v gs =0v - - 250 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =18a - 17 - nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =5v - 10 - nc t d(on) turn-on delay time 2 v ds =15v - 7.2 - ns t r rise time i d =18a - 60 - ns t d(off) turn-off delay time r g =3.3w , v gs =10v - 22.5 - ns t f fall time r d =0.83w -10- ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =25v - 380 - pf c rss reverse transfer capacitance f=1.0mhz - 133 - pf symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 36 a i sm pulsed source current ( body diode ) 1 - - 150 a v sd forward on voltage 2 t j =25c, i s =36a, v gs =0v - - 1.3 v notes: 1.pulse width limited by maximum junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board
adva nced power electronics corp. 3/6 ap40n03gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 20 40 60 80 100 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v 6.0v 5.0v 4.0v v g =3.0v 0 40 80 120 160 200 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v 6.0v 5.0v 4.0v v g =3.0v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 8 12 16 20 24 28 32 24681 0 v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =18a t c =25c 1 10 100 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
adva nced power electronics corp. 4/6 ap40n03gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge typical electrical characteristics (cont.) 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =16v v ds =20v v ds =24v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on)
adva nced power electronics corp. 5/6 ap40n03gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: to-252 laser marking symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm product: ap40n03 gh = rohs-compliant halogen-free to-252 40n03gh ywwsss date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e3 package code
adva nced power electronics corp. 6/6 ap40n03gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: to-251 symbols millimeters 40n03gj ywwsss product: ap40n03 package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gj = rohs-compliant halogen-free to-251
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